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BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

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BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

Brand Name : Anterwell

Model Number : BTA24-600BWRG

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

I² t Value for fusing : 340 A² s

Critical rate of rise of on-state current : 50 A/µs

Peak gate current : 4 A

Average gate power dissipation : 1 W

Storage junction temperature : - 40 to + 150°C

Operating junction temperature : - 40 to + 125°C

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BTA24, BTB24, BTA25

BTA26, BTB26, T25

25 A standard and Snubberless™ triacs

Features

■ High current triac

■ Low thermal resistance with clip bonding

■ High commutation (4 quadrant) or very high commutation (3 quadrant) capability

■ BTA series UL1557 certified (File ref: 81734)

■ Packages are RoHS (2002/95/EC) compliant

Applications

Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar.

The snubberless versions (BTA/BTB...W and T25 series) are especially recommended for use on inductive loads, due to their high commutation performances. The BTA series provides an insulated tab (rated at 2500 VRMS).

Description

Available either in through-hole or surface-mount packages, the BTA24, BTB24, BTA25, BTA26, BTB26 and T25 triac series is suitable for general purpose mains power AC switching.

BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

Absolute maximum ratings

Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) TOP3 Tc = 105°C 25 A
D2PAK / TO-220AB Tc = 100°C
RD91 Ins/ TOP3 Ins. Tc = 100°C
TO-220AB Ins. Tc = 75°C
ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) F = 50 Hz t = 20 ms 250 A
F = 60 Hz t = 16.7 ms 260
I ² t I ² t Value for fusing tp = 10 ms 340 A² s
dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

 F = 120 Hz Tj = 125°C 50 A/µs
VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

 °C

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Product Tags:

multi emitter transistor

      

silicon power transistors

      
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