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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

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Anterwell Technology Ltd.

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Model Number : BSP315

Certification : Original Factory Pack

Place of Origin : China

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T , Western Union,PayPal

Supply Ability : 6800PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Main Line : Ic,module,transistor,diodes,capacitor,resistor Etc

Features : P channel

Features2 : Enhancement mode

Features3 : • Logic Level

Features4 : VGS(th) = -0.8...-2.0 V

Package : SOT-23

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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

• P channel

• Enhancement mode Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

• Logic Level

• VGS(th) = -0.8...-2.0 V

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Maximum Ratings

Parameter	Symbol	Values	Unit
Drain source voltage	V_DS	-50	V
Drain-gate voltage RGS = 20 kΩ	V_DGR	-50
Gate source voltage	V_GS	± 20
Continuous drain current TA = 39 °C	I_D	-1.1	A
DC drain current, pulsed TA = 25 °C	I_Dpuls	-4.4	A
Power dissipation TA = 25 °C	P_tot	1.8	W

Product Tags:

power mosfet ic

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