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Brand Name : TI
Model Number : CSD19533Q5A
Certification : Original Factory Pack
Place of Origin : Original
MOQ : 20pcs
Price : Negotiation
Payment Terms : T/T, Western Union,PayPal
Supply Ability : 5200PCS
Delivery Time : 1 Day
Packaging Details : please contact me for details
Drain-to-Source Voltage : 100 V
Gate Charge Total (10 V) : 27 nC
Gate Charge Gate to Drain : 4.9 nC
Drain-to-Source On Resistance : 8.7 mΩ
Threshold Voltage : 2.8 V
FEATURES
• Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Primary Side Telecom
• Secondary Side Synchronous Rectifier
• Motor Control
DESCRIPTION
This 100 V, 7.8 mΩ, SON 5 mm x 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Q5A Tape and Reel Information
Notes:
1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket
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Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A Images |